Nand Flash介绍

NAND FLASH MODE CONFIGURATION
1. Set NAND flash configuration by NFCONF register.
2. Write NAND flash command onto NFCMD register.
3. Write NAND flash address onto NFADDR register.
4. Read/Write data while checking NAND flash status by NFSTAT register. R/nB signal should be checked before read operation or after program operation.

Function

1st. Cycle

2nd. Cycle

3rd. Cycle

Acceptable Command

during Busy

Read 1

00h/01h⁽¹⁾

-

-

Read 2

50h

-

-

Read ID

90h

-

-

Reset

FFh

-

-

O

Page Program (True)⁽²⁾

80h

10h

-

Page Program (Dummy)⁽²⁾

80h

11h

-

Copy-Back Program(True)⁽²⁾

00h

8Ah

10h

Copy-Back Program(Dummy)⁽²⁾

03h

8Ah

11h

Block Erase

60h

D0h

-

Multi-Plane Block Erase

60h----60h

D0h

-

Read Status

70h

-

-

O

Read Multi-Plane Status

71h⁽³⁾

-

-

O

void reset_nand()
{
    int i=0;
    NFCONF &= ~0x800;    /* 现在真正使用Nand flash，bit[11]要置0，与初始化时相反 */
        for(; i<10; i++);
    NFCMD = 0xff;    //reset command

/* 复位命令。NFCMD寄存器只用到低8位（bit[7:0]）。
K9F1208U0M手册中列出了针对此块flash的各种命令，见Table 1. Command Sets。vivi/include/mtd/nand.h更直观的列出了各种命令 */
    wait_idle();
}

/* 初始化NAND Flash */
/* NFCONF设定为0xf830，作用是使能Nand flash控制器、初始化ECC、Nand flash片选信号nFCE=1(inactive，真正使用时再让它等于0)、设置TACLS、TWRPH0、TWRPH1。
TACLS、 TWRPH0、TWRPH1这三个参数是控制Nand flash信号线CLE/ALE和写控制信号nWE的时序关系的，要参照具体的flash芯片手册来设置。我这个是K9F1208U0M ，在表“AC Timing Characteristics for Command / Address / Data Input”中可以看到：
CLE setup Time = 0 ns，CLE Hold Time = 10 ns，
ALE setup Time = 0 ns，ALE Hold Time = 10 ns，
WE Pulse Width = 25 ns
可 以计算，即使在HCLK=100MHz的情况下，TACLS+TWRPH0+TWRPH1=6/100 uS=60 ns，也是可以满足NAND Flash K9F1208U0M的时序要求的。*/
void init_nand()
{
    NFCONF = 0xf830;//自己对照手册
    reset_nand();
}

#include <config.h>

#define __REGb(x)    (*(volatile unsigned char *)(x))
#define __REGi(x)    (*(volatile unsigned int *)(x))
#define NF_BASE        0x4e000000
#define NFCONF        __REGi(NF_BASE + 0x0)
#define NFCMD        __REGb(NF_BASE + 0x4)
#define NFADDR        __REGb(NF_BASE + 0x8)
#define NFDATA        __REGb(NF_BASE + 0xc)
#define NFSTAT        __REGb(NF_BASE + 0x10)

#define BUSY 1
inline void wait_idle(void) {
    int i;

/* NFSTAT：只用到位0，0-busy，1-ready */
    while(!(NFSTAT & BUSY))
      for(i=0; i<10; i++);
}

#define NAND_SECTOR_SIZE    512      /* Nand flash是以512Byte为单位来读写的 */
#define NAND_BLOCK_MASK     (NAND_SECTOR_SIZE - 1)

/* low level nand read function */
/* 下面的读过程严格按照2410手册上的顺序 */
int nand_read_ll(unsigned char *buf, unsigned long start_addr, int size)
{
    int i, j;

    if ((start_addr & NAND_BLOCK_MASK) || (size & NAND_BLOCK_MASK)) {
        return -1;    /* invalid alignment */
    }

/* chip Enable */
/* 对应第一条：1. Set NAND flash configuration by NFCONF register. */
    NFCONF &= ~0x800;
    for(i=0; i<10; i++);

    for(i=start_addr; i < (start_addr + size);) {
      /* READ0 */
/* 对应第二条：2. Write NAND flash command onto NFCMD register. */
      NFCMD = 0;

      /* Write Address */
/* 对应第三条：3. Write NAND flash address onto NFADDR register.
*NFADDR寄存器也只用到低八位来传输，所以需要分4次来写入一个完整的32位地址，需要注意后3次的移位操作
*/
      NFADDR = i & 0xff;
      NFADDR = (i >> 9) & 0xff;
      NFADDR = (i >> 17) & 0xff;
      NFADDR = (i >> 25) & 0xff;

/* 对应第四条：4. Read/Write data while checking NAND flash status by NFSTAT register.
一个地址对应512个字节数据。所以，由于8bit位宽的限制，每次读取8位（1个字节），共读512次得到1页512Byte数据
*/
      wait_idle();
      for(j=0; j < NAND_SECTOR_SIZE; j++, i++) {
        *buf = (NFDATA & 0xff);
        buf++;
      }
    }

/* chip Disable */
/* 读写完毕需要禁止Nand flash ，与开始相对应*/
    NFCONF |= 0x800;    /* chip disable */

    return 0;
}